V23990-P586-A target datasheet flow pim ? 1 (2 n d gen.), 600 v version 05/03 maximum ratings / h?chstzul?ssige werte parameter symbol value unit input rectifier bridge gleichrichte r repetitive peak reverse voltage v rrm 1600 periodische rckw. spitzensperrspannung forward current per diode dc current t h =80c; i fav 33 a dauergrenzstrom t c =80c 40-limited by wires surge forward current t p =10ms t j =25c i fsm 250 a sto?strom grenzwert i 2 t-value t p =10ms t j =25c i 2 t 310 a 2 s grenzlastintegral power dissipation per diode t j =150c t h =80c p tot 39 w verlustleistung pro diode t c =80c 60,4 transistor inverter transistor wechselrichte r collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c, i c 30 a kollektor-dauergleichstrom t c =80c 40 limited by pin repetitive peak collector current t p =1ms t h =80c i cpuls 50 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 53 w verlustleistung pro igbt t c =80c 100 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj 150c v ge =15v t sc us kurzschlu?verhalten v ce =600 v diode inverte r diode wechselrichte r dc forward current t j =150c t h =80c, i f 25 a dauergleichstrom t c =80c 40 limited by pin repetitive peak forward current t p =1ms t h =80c i frm 50 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 30 w verlustleistung pro diode t c =80c 60,0 condition copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P586-A target datasheet flow pim ? 1 (2 n d gen.), 600 v version 05/03 maximum ratings / h?chstzul?ssige werte parameter symbol value unit condition transistor brake transistor bremse collector-emitter break down voltage v ce 600 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c, i c 20 a kollektor-dauergleichstrom t c =80c 30-limited by wires repetitive peak collector current t p =1ms t h =80c i cpuls 40 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 45 w verlustleistung pro igbt t c =80c 85 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj 150c v ge =15v t sc us kurzschlu?verhalten v ce =600 v diode brake diode brake dc forward current t j =150c t h =80c, i f 7a dauergleichstrom t c =80c 10 repetitive peak forward current t p =1ms t h =80c i frm 14 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 13 w verlustleistung pro diode t c =80c 20 thermal properties thermische eigenschaften max. chip temperature t j max 150 c max. chiptemperatur storage temperature t st g -40?+125 c lagertemperatur operation temperature t o p -40?+125 c betriebstemperatu r insulation properties modulisolation insulation voltage t=1min v is 4000 vdc isolationsspannung creepage distance min 12,7 mm kriechstrecke clearance min 12,7 mm luftstrecke copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P586-A target datasheet flow pim ? 1 (2 n d gen.), 600v version 05/03 characteristic values description symbol datasheet values unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max input rectifier bridge gleichrichter forward voltage v f tj=25c 30 1,18 1,35 v durchla?pannung tj=125c 1,15 threshold voltage (for power loss calc. only) v to tj=25c 30 0,9 v schleusenspannung tj=125c 0,78 slope resistance (for power loss calc. only) r t tj=25c 0,009 ohm ersatzwiderstand tj=125c 30 0,012 reverse current i r tj=25c 1200 0,02 ma sperrstrom tj=150c 4 thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness 50um 1,8 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke 50um = 0,61 w/mk 1,2 k/w transistor inverte r transistor wechselrichte r gate emitter threshold voltage v ge(th) tj=25c v ce =v ge 0,001 3 4 5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 50 1,7 2 2,75 v kollektor-emitter s?ttigungsspannung tj=125c collector-emitter cut-off current incl. diode i ces tj=25c 0 600 0,25 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 30 0 180 na gate-emitter reststrom tj=125c turn-on delay time t d(on) tj=25c 15 400 50 ns einschaltverz?gerungszeit tj=125c tbd rise time t r tj=25c 15 400 50 ns anstiegszeit tj=125c tbd turn-off delay time t d(off) tj=25c 15 400 50 ns abschaltverz?gerungszeit tj=125c tbd fall time t f tj=25c 15 400 50 ns fallzeit tj=125c tbd turn-on energy loss per pulse e on tj=25c mws einschaltverlustenergie pro puls tj=125c tbd turn-off energy loss per pulse e off tj=25c mws abschaltverlustenergie pro puls tj=125c tbd input capacitance c iss tj=25c f=1mhz 0 25 pf eingangskapazit?t tj=125c tbd output capacitance c oss tj=25c f=1mhz 0 25 pf ausgangskapazit?t tj=125c tbd reverse transfer capacitance c rss tj=25c f=1mhz 0 25 pf rckwirkungskapazit?t tj=125c tbd gate charge q gate tj=25c nc gate ladung tj=125c thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness 50um 1,33 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke 50um = 0,61 w/mk 0,7 k/w coupled thermal resistance inverter diode-transistor r thjh thermal grease thickness 50um k/w gekoppelte w?rmewiderstand wechselrichter diode-transistor warmeleitpaste dicke 50um = 0,61 w/mk copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P586-A target datasheet flow pim ? 1 (2 n d gen.), 600v version 05/03 characteristic values description symbol datasheet values unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max diode inverte r diode wechselrichte r diode forward voltage v f tj=25c 50 1,45 2,05 v durchla?spannung tj=125c 1,3 peak reverse recovery current i rrm tj=25c rgon=56ohm 15 300 50 a rckstromspitze tj=125c tbd reverse recovery time t rr tj=25c rgon=56ohm 15 300 50 ns sperreverz?gerungszeit tj=125c tbd reverse recovered charge q rr tj=25c rgon=56ohm 15 300 50 uc sperrverz?gerungsladung tj=125c tbd reverse recovered energy erec tj=25c rgon=56ohm 15 300 50 mws sperrverz?gerungsenergie tj=125c tbd thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thickness 50um 2,5 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke 50um = 0,61 w/mk 1,5 k/w coupled thermal resistance inverter transistor-diode r thjh thermal grease thickness 50um tbd k/w gekoppelte w?rmewiderstand wechselrichter transistor-diode warmeleitpaste dicke 50um = 0,61 w/mk transistor brc transistor brc gate emitter threshold voltage v ge(th) tj=25c v ce =v ge 7e-04 3 4 5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 30 1,6 2 2,6 v kollektor-emitter s?ttigungsspannung tj=125c collector-emitter cut-off i ces tj=25c 0 600 0,1 ma kollektor-emitter reststrom tj=125c gate-emitter leakage current i ges tj=25c 30 0 180 na gate-emitter reststrom tj=125c turn-on delay time t d(on) tj=25c rgon=11ohm 15 400 30 ns einschaltverz?gerungszeit tj=150c rgof=11ohm 44 53 rise time t r tj=25c rgon=11ohm 15 400 30 ns anstiegszeit tj=150c rgof=11ohm 34 40 turn-off delay time t d(off) tj=25c rgon=11ohm 15 400 30 ns abschaltverz?gerungszeit tj=150c rgof=11ohm 324 389 fall time t f tj=25c rgon=11ohm 15 400 30 ns fallzeit tj=150c rgof=11ohm 67 80 turn-on energy loss per pulse e on tj=25c uws einschaltverlustenergie pro puls tj=125c turn-off energy loss per pulse e off tj=25c uws abschaltverlustenergie pro puls tj=125c input capacitance c iss tj=25c f=1mhz 0 25 1600 1920 pf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0 25 150 180 pf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0 25 92 110 pf rckwirkungskapazit?t tj=125c gate charge q gate nc gate ladung thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh tj=25c 1,56 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc tj=125c 1,0 k/w copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
V23990-P586-A target datasheet flow pim ? 1 (2 n d gen.), 600v version 05/03 characteristic values description symbol datasheet values unit t(c) other conditions v ge (v) v r (v) v ce (v) i c (a) if(a) (rgon-rgoff) v gs (v) v ds (v) i d (a) min typ max diode brc diode brc diode forward voltage v f tj=25c 6 v durchla?spannung tj=150c 1,27 reverse current i r tj=25c tbd ua sperrstrom tj=125c peak reverse recovery current i rrm tj=25c rgon=68ohm 15 300 5 tbd a rckstromspitze tj=125c reverse recovery time t rr tj=25c rgon=68ohm 15 300 5 tbd ns sperreverz?gerungszeit tj=125c reverse recovered charge q rr tj=25c rgon=68ohm 15 300 5 tbd uc sperrverz?gerungsladung tj=125c reverse recovery energy e rec tj=25c rgon=68ohm 15 300 5 tbd uws sperrverz?gerungsenergie tj=125c thermal resistance chip to heatsink per chip w?rmewiderstand chip-khlk?rper pro chip r thjh thermal grease thikness 50um 5,1 k/w thermal resistance chip to case per chip w?rmewiderstand chip-gehause pro chip r thjc warmeleitpaste dicke 50um = 0,61 w/mk 3,8 k/w ntc-thermisto r ntc-widerstand rated resistance r 25 tj=25c tol. 5% 20,9 22 23,1 kohm nennwiderstand deviation of r100 d r/r tc=100c r100=1503w 2,9 %/k abweichung von r100 power dissipation given epcos-typ p tj=25c 210 mw verlustleistung epcos-typ angeben b-value b (25/100) tj=25c tol. 3% 3980 k b-wert copyright by tyco electronics rupert-mayer-str. 44, d81359 mnchen power.switches@tycoelectronics.com
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